Semiconductor device with air gap and boron nitride cap and method for preparing the same

ABSTRACT

The present disclosure provides a semiconductor device includes a semiconductor substrate, a first metal plug, a second metal plug, a third metal plug, a fourth metal plug, and a boron nitride layer. The first metal plug and the second metal plug are disposed over a pattern-dense region of the semiconductor substrate. The third metal plug and the fourth metal plug are disposed over a pattern-loose region of the semiconductor substrate. The boron nitride layer is disposed over the semiconductor substrate. Each of the first metal plug and the second metal plug includes a barrier layer and a conductive feature. The barrier layer is contact with the semiconductor substrate. The conductive feature is disposed over the barrier layer. The conductive feature is separated from the semiconductor substrate by the barrier layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation-in-part application of U.S. Non-Provisional application Ser. No. 17/537,911 filed Nov. 30, 2021, which is a divisional application of U.S. Non-Provisional application Ser. No. 16/937,347 filed Jul. 23, 2020. Those are incorporated herein by reference in their entireties.

TECHNICAL FIELD

The present disclosure relates to a semiconductor device and method for preparing the semiconductor device, and more particularly, to a semiconductor device and a method for preparing the semiconductor device with an air gap and a boron nitride cap for reducing capacitive coupling in a pattern-dense region.

DISCUSSION OF THE BACKGROUND

Semiconductor devices are essential for many modern applications. With the advancement of electronic technology, semiconductor devices are becoming smaller in size while providing greater functionality and including greater amounts of integrated circuitry. Due to the miniaturized scale of semiconductor devices, various types and dimensions of semiconductor devices providing different functionalities are integrated and packaged into a single module. Furthermore, numerous manufacturing operations are implemented for the integration of various types of semiconductor devices.

However, the manufacturing and integration of semiconductor devices involve many complicated steps and operations. Integration in semiconductor devices becomes increasingly complicated. An increase in the complexity of manufacturing and integration of the semiconductor device may cause deficiencies, such as increased parasitic capacitance between adjacent conductive elements, which results in increased power consumption and unwanted resistive-capacitive (RC) delay (i.e., signal delay), especially in a pattern-dense region. Accordingly, there is a continuous need to improve the manufacturing process of semiconductor devices so that the problems can be addressed.

This Discussion of the Background section is provided for background information only. The statements in this Discussion of the Background are not an admission that the subject matter disclosed in this section constitutes prior art to the present disclosure, and no part of this Discussion of the Background section may be used as an admission that any part of this application, including this Discussion of the Background section, constitutes prior art to the present disclosure.

SUMMARY

In one embodiment of the present disclosure, a semiconductor device includes a semiconductor substrate, a first metal plug, a second metal plug, a third metal plug, a fourth metal plug, and a boron nitride layer. The first metal plug and the second metal plug are disposed over a pattern-dense region of the semiconductor substrate. The third metal plug and the fourth metal plug are disposed over a pattern-loose region of the semiconductor substrate. The boron nitride layer is disposed over the semiconductor substrate. Each of the first metal plug and the second metal plug includes a barrier layer and a conductive feature. The barrier layer is contact with the semiconductor substrate. The conductive feature is disposed over the barrier layer. The conductive feature is separated from the semiconductor substrate by the barrier layer.

In some embodiments, the first metal plug and the second metal plug penetrate through the boron nitride layer and active region of the semiconductor substrate.

In some embodiments, a thickness of a bottom portion of the barrier layer is less than a thickness of a sidewall portion of the barrier layer.

In some embodiments, the semiconductor device further includes a first spacer and a second spacer. The first spacer is surrounding the first metal plug. The second spacer is surrounding the second metal plug. The first spacer and the second spacer are in contact with the boron nitride layer, the semiconductor substrate and the barrier layer.

In some embodiments, the semiconductor device further includes an air gap disposed between the first metal plug and the second metal plug.

In some embodiments, a topmost surface of the air gap is lower than a topmost surface of the first metal plug.

In some embodiments, the air gap is in contact with the semiconductor substrate.

In some embodiments, the semiconductor device further includes an energy removable structure surrounding the air gap.

In some embodiments, the pattern-dense region is in a memory cell of a memory device, and the pattern-loose region is in a peripheral region outside of the memory cell of the memory device.

In another embodiment of the present disclosure, a semiconductor device includes a semiconductor substrate, a first conductive feature, a second conductive feature, a third conductive feature, a fourth conductive feature, a boron nitride layer, a center conductive layer, an outer conductive layer and a top conductive plug. The first conductive feature and the conductive feature are disposed over a pattern-dense region of the semiconductor substrate. The third conductive feature and the fourth conductive feature are disposed over a pattern-loose region of the semiconductor substrate. The boron nitride layer is disposed over the semiconductor substrate. The center conductive layer is disposed over the first conductive feature. The outer conductive layer is disposed over the center conductive layer. The top conductive plug is disposed over the outer conductive layer.

In some embodiments, a topmost surface of the top conductive plug is coplanar with a top surface of the boron nitride layer.

In some embodiments, the outer conductive layer includes metal silicide.

In some embodiments, the center conductive layer includes polycrystalline silicon.

In some embodiments, the center conductive layer includes polycrystalline germanium.

In some embodiments, the center conductive layer includes polycrystalline silicon-germanium.

In some embodiments, a maximum width of the top conductive plug is substantially equal to a maximum width of the outer conductive layer.

In some embodiments, the semiconductor device further includes a first spacer and a second spacer. The first spacer is surrounding the first conductive feature. The second spacer is surrounding the second conductive feature.

In some embodiments, the semiconductor device further includes an air gap disposed between the first conductive feature and the second conductive feature. The air gap is in contact with the semiconductor substrate, the first spacer, the second spacer, and the boron nitride layer.

In some embodiments, a topmost surface of the air gap is lower than a topmost surface of the first conductive feature.

In some embodiments, the outer conductive layer covers the center conductive layer and is in contact with the first conductive feature. The top conductive plug is separated from the center conductive layer by the outer conductive layer.

In some embodiments, the outer conductive layer has an arch shape.

In some embodiments, the center conductive layer has a triangle shape, and the outer conductive layer has an inverted V-shape.

In some embodiments, the center conductive layer has a circular arc shape.

In some embodiments, the center conductive layer a concave top surface, and the outer conductive layer has a convex bottom surface.

In some embodiments, the outer conductive layer has a uniform thickness.

In some embodiments, the pattern-dense region is in a memory cell of a memory device, and the pattern-loose region is in a peripheral region outside of the memory cell of the memory device.

In yet another embodiment of the present disclosure, a method for preparing a semiconductor device is provided. The method includes: forming a first metal plug, a second metal plug, a third metal plug and a fourth metal plug over a semiconductor substrate; and depositing a boron nitride layer over the first metal plug, the second metal plug, the third metal plug, and the fourth metal plug. Forming a first metal plug, a second metal plug, a third metal plug and a fourth metal plug includes: forming a doped oxide layer over the semiconductor substrate, wherein the doped oxide layer has a first opening and a second opening; conformally forming a barrier layer in the first opening and the second opening; forming a first conductive feature in the first opening and a second conductive feature in the second opening, wherein the first conductive feature and the second conductive feature are separated from the semiconductor substrate by the barrier layer; and removing the doped oxide layer.

In some embodiments, the first metal plug and the second metal plug are disposed over a pattern-loose region of the semiconductor substrate, and the third metal plug and the fourth metal plug are disposed over a pattern-dense region of the semiconductor substrate.

In some embodiments, the pattern-dense region is in a memory cell of a memory device, and the pattern-loose region is in a peripheral region outside of the memory cell of the memory device.

In some embodiments, a thickness of a bottom portion of the barrier layer is less than a thickness of a sidewall portion of the barrier layer.

In some embodiments, the method further includes: forming a first spacer, a second spacer, a third spacer and a fourth spacer surrounding the first metal plug, the second metal plug, the third metal plug and the fourth metal plug, respectively. The first spacer, the second spacer, the third spacer and the fourth spacer are in contact with the boron nitride layer, the semiconductor substrate and the barrier layer.

In some embodiments, depositing the boron nitride layer over the first metal plug, the second metal plug, the third metal plug, and the fourth metal plug includes: forming an air gap between the first metal plug and the second metal plug.

In some embodiments, a topmost surface of the air gap is lower than a topmost surface of the first metal plug.

In some embodiments, the air gap is in contact with the semiconductor substrate.

In some embodiments, the method further includes: before the boron nitride layer is deposited, forming an energy removable layer between the first metal plug and the second metal plug; and after the boron nitride layer is deposited, performing a heat treatment process to remove the energy removable layer to form an air gap.

Embodiments of a semiconductor device are provided in the disclosure. The semiconductor device includes metal plugs and a boron nitride layer over a pattern-dense region and a pattern-loose region of a semiconductor substrate. The boron nitride layer has a first portion between the metal plugs in the pattern-dense region, and a second portion between the metal plugs in the pattern-loose region. The first portion of the boron nitride layer is separated from the semiconductor substrate by an air gap, and the second portion of the boron nitride layer is in direct contact with the semiconductor substrate. Therefore, the parasitic capacitance between the metal plugs of the pattern-dense region may be reduced. As a result, the overall device performance may be improved.

The foregoing has outlined rather broadly the features and technical advantages of the present disclosure in order that the detailed description of the disclosure that follows may be better understood. Additional features and advantages of the disclosure will be described hereinafter, and form the subject of the claims of the disclosure. It should be appreciated by those skilled in the art that the conception and specific embodiment disclosed may be readily utilized as a basis for modifying or designing other structures or processes for carrying out the same purposes of the present disclosure. It should also be realized by those skilled in the art that such equivalent constructions do not depart from the spirit and scope of the disclosure as set forth in the appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It should be noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1 is a top view illustrating a semiconductor device, in accordance with some embodiments.

FIG. 2 is a cross-sectional view illustrating the semiconductor device along the sectional line I-I′ in FIG. 1 , in accordance with some embodiments.

FIG. 3 is a flow diagram illustrating a method of forming a semiconductor device, in accordance with some embodiments.

FIG. 4 is a flow diagram illustrating a method of forming a semiconductor device, in accordance with some other embodiments.

FIG. 5 is a top view illustrating an intermediate stage of forming metal plugs during the formation of the semiconductor device, in accordance with some embodiments.

FIG. 6 is a cross-sectional view illustrating an intermediate stage of forming metal plugs during the formation of the semiconductor device along the sectional line I-I′ in FIG. 5 , in accordance with some embodiments.

FIG. 7 is a top view illustrating an intermediate stage of forming spacers during the formation of the semiconductor device, in accordance with some embodiments.

FIG. 8 is a cross-sectional view illustrating an intermediate stage of forming spacers during the formation of the semiconductor device along the sectional line I-I′ in FIG. 7 , in accordance with some embodiments.

FIG. 9 is a cross-sectional view illustrating an intermediate stage of forming a doped oxide layer during the formation of the semiconductor device, in accordance with some other embodiments.

FIG. 10 is a cross-sectional view illustrating an intermediate stage of forming a patterned mask during the formation of the semiconductor device structure, in accordance with some embodiments.

FIG. 11 is a cross-sectional view illustrating an intermediate stage of forming openings in the doped oxide layer during the formation of the semiconductor device, in accordance with some embodiments.

FIG. 12 is a cross-sectional view illustrating an intermediate stage of forming metal plugs in the doped oxide layer during the formation of the semiconductor device, in accordance with some embodiments.

FIG. 13 is a cross-sectional view illustrating an intermediate stage of removing the doped oxide layer during the formation of the semiconductor device, in accordance with some embodiments.

FIG. 14 is a cross-sectional view illustrating an intermediate stage of forming spacers during the formation of the semiconductor device, in accordance with some embodiments.

FIG. 15 is a cross-sectional view illustrating an intermediate stage of forming a dielectric layer during the formation of the semiconductor device, in accordance with some embodiments.

FIG. 16 is a cross-sectional view illustrating an intermediate stage of forming an energy removable layer during the formation of the semiconductor device, in accordance with some embodiments.

FIG. 17 is a cross-sectional view illustrating an intermediate stage of forming a dielectric layer during the formation of the semiconductor device, in accordance with some embodiments.

FIG. 18 is a cross-sectional view illustrating an intermediate stage of removing the energy removable layer during the formation of the semiconductor device, in accordance with some embodiments.

FIG. 19 is a cross-sectional view illustrating an intermediate stage of forming an energy removable structure during the formation of a modified semiconductor device, in accordance with some embodiments.

FIG. 20 is a partial schematic illustration of an exemplary integrated circuit, including an array of memory cells in accordance with some embodiments.

FIG. 21 is a cross-sectional view illustrating a semiconductor device according to some embodiments of the present disclosure.

FIG. 22 is a cross-sectional view illustrating the semiconductor device according to other embodiments of the present disclosure.

FIG. 23 is a cross-sectional view illustrating semiconductor device according to some embodiments of the present disclosure.

FIG. 24 is a cross-sectional view illustrating semiconductor device according to some embodiments of the present disclosure.

FIG. 25 is a cross-sectional view illustrating semiconductor device according to some embodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.

FIG. 1 is a top view illustrating a semiconductor device 100, and FIG. 2 is a cross-sectional view illustrating the semiconductor device 100 along the sectional line I-I′ in FIG. 1 , in accordance with some embodiments. In some embodiments, the semiconductor device 100 includes a semiconductor substrate 101, conductive features 125 a, 125 b, 127 a, 127 b, spacers 135 a, 135 b, 137 a, 137 b, and a dielectric layer such as a boron nitride (BN) layer 143, as shown in FIGS. 1 and 2 in accordance with some embodiments. In some embodiments, the conductive features 125 a, 125 b, 127 a, 127 b are conductive wires such as interconnects or bit lines, configured to electrically connecting two conductive terminals laterally separated from each other. In some embodiments, the conductive features 125 a, 125 b, 127 a, 127 b are metal plugs, such as bit line plug or capacitor plug, configured to electrically connecting two conductive terminals vertically separated from each other. The conductive features 125 a, 125 b, 127 a, 127 b are elaborated in connection with following figures, using the metal plugs as examples.

In some embodiments, isolation structures (not shown) are disposed in the semiconductor substrate 101, and active areas (not shown) are defined by the isolation structures in the semiconductor substrate 101. Each of the active areas may include source/drain (S/D) regions. In some embodiments, the semiconductor substrate 101 has a pattern-dense region A and a pattern-loose region B, the metal plugs 125 a and 127 a are disposed over the pattern-dense region A, and the metal plugs 125 b and 127 b are disposed over the pattern-loose region B. It should be noted that the distance D1 between the metal plugs 125 a and 127 a is less than the distance D2 between the metal plugs 125 b and 127 b. No obvious interfaces exist between the pattern-dense region A and the pattern-loose region B. The dashed lines shown in FIGS. 1 and 2 are used to clarify the disclosure.

The spacers 135 a and 137 a are disposed over the pattern-dense region A, and the spacers 135 b and 137 b are disposed over the pattern-loose region B. In some embodiments, the metal plug 125 a is surrounded by the spacer 135 a, the metal plug 127 a is surrounded by the spacer 137 a, the metal plug 125 b is surrounded by the spacer 135 b, and the metal plug 127 b is surrounded by the spacer 137 b. The dielectric layer (boron nitride layer) 143 is disposed over the pattern-dense region A and the pattern-loose region B.

Specifically, the metal plugs 125 a, 125 b, 127 a, 127 b and the spacers 135 a, 135 b, 137 a, 137 b over the pattern-dense region A and the pattern-loose region B are covered by the boron nitride layer 143. In some embodiments, the boron nitride layer 143 has a first portion P1 between the metal plugs 125 a and 127 a, and a second portion P2 between the metal plugs 125 b and 127 b. In other words, the first portion P1 of the boron nitride layer 143 is over the pattern-dense region A of the semiconductor substrate 101, and the second portion P2 of the boron nitride layer 143 is over the pattern-loose region B of the semiconductor substrate 101. In particular, the first portion P1 of the boron nitride layer 143 is between and in direct contact with the spacers 135 a and 137 a, and the second portion P2 of the boron nitride layer 143 is between and in direct contact with the spacers 135 b and 137 b. In some embodiments, the contact area between the first portion P1 of the boron nitride layer 143 and the spacer 135 a (or the spacer 137 a) is less than the contact area between the second portion P2 of the boron nitride layer 143 and the spacer 135 b (or the spacer 137 b).

It should be noted that the first portion P1 of the boron nitride layer 143 is separated from the semiconductor substrate 101 by an air gap G while the second portion P2 of the boron nitride layer 143 is in direct contact with the semiconductor substrate 101. In other words, there is no air gap in the pattern-loose region B. As shown in FIG. 2 , the second portion P2 of the boron nitride layer 143 extends to cover the bottommost parts of the spacers 135 b and 137 b, such that the spacer 135 b is enclosed by the metal plug 125 b, the second portion P2 of the boron nitride layer 143, and the semiconductor substrate 101, and the spacer 137 b is enclosed by the metal plug 127 b, the second portion P2 of the boron nitride layer 143, and the semiconductor substrate 101. In some embodiments, the air gap G is between the spacers 135 a and 137 a of the pattern-dense region A, and a top surface TS of the metal plug 125 a is higher than a bottom surface BS of the first portion P1 of the boron nitride layer 143 (i.e., the interface between the first portion P1 of the boron nitride layer 143 and the air gap G).

In some embodiments, the first portion P1 of the boron nitride layer 143 has a width W1, the second portion P2 of the boron nitride layer 143 has a width W2, and the width W2 is greater than the width W1. Moreover, the first portion P1 of the boron nitride layer 143 has a height H1, the second portion P2 of the boron nitride layer 143 has a height H2, and the height H2 is greater than the height H1. It should be noted that the height H2 of the second portion P2 of the boron nitride layer 143 is substantially the same as the height of the metal plug 125 b or the height of the metal plug 127 b. Within the context of this disclosure, the word “substantially” means preferably at least 90%, more preferably 95%, even more preferably 98%, and most preferably 99%.

Furthermore, bit lines (not shown) and storage nodes (not shown) may be formed over the structure of FIGS. 1 and 2 in the subsequent processes. In some embodiments, the bit lines and the storage nodes are electrically connected to the S/D regions in the semiconductor substrate 101. In some embodiments, the semiconductor device 100 is a dynamic random access memory (DRAM).

FIG. 3 is a flow diagram illustrating a method 10 of forming the semiconductor device 100, and the method 10 includes steps S11, S13, S15-1, S15-2, S15-3, S17, and S19, in accordance with some embodiments. FIG. 4 is a flow diagram illustrating another method 20 of forming the semiconductor device 100, and the method 20 includes steps S21, S23, S25, S27, S29-1, S29-2, S29-3, S31, and S33, in accordance with some embodiments. The steps S11 to S19 of FIG. 3 and the steps S21 to S33 of FIG. 4 are elaborated in connection with following figures.

FIGS. 5 and 7 are top views illustrating intermediate stages in the formation of the semiconductor device 100, and FIGS. 6 and 8 are cross-sectional views illustrating intermediate stages in the formation of the semiconductor device 100, in accordance with some embodiments. It should be noted that FIGS. 6 and 8 are cross-sectional views along the sectional line I-I′ of FIGS. 5 and 7 , respectively.

As shown in FIGS. 5 and 6 , the semiconductor substrate 101 is provided. The semiconductor substrate 101 may be a semiconductor wafer such as a silicon wafer. Alternatively or additionally, the semiconductor substrate 101 may include elementary semiconductor materials, compound semiconductor materials, and/or alloy semiconductor materials. Examples of the elementary semiconductor materials may include, but are not limited to, crystal silicon, polycrystalline silicon, amorphous silicon, germanium, and/or diamond. Examples of the compound semiconductor materials may include, but are not limited to, silicon carbide, gallium arsenic, gallium phosphide, indium phosphide, indium arsenide, and/or indium antimonide. Examples of the alloy semiconductor materials may include, but are not limited to, SiGe, GaAsP, AlinAs, AlGaAs, GaInAs, GaInP, and/or GaInAsP.

In some embodiments, the semiconductor substrate 101 includes an epitaxial layer. For example, the semiconductor substrate 101 has an epitaxial layer overlying a bulk semiconductor. In some embodiments, the semiconductor substrate 101 is a semiconductor-on-insulator substrate which may include a substrate, a buried oxide layer over the substrate, and a semiconductor layer over the buried oxide layer, such as a silicon-on-insulator (SOI) substrate, a silicon germanium-on-insulator (SGOI) substrate, or a germanium-on-insulator (GOI) substrate. Semiconductor-on-insulator substrates can be fabricated using separation by implantation of oxygen (SIMOX), wafer bonding, and/or other applicable methods.

As mentioned above, the semiconductor substrate 101 has a pattern-dense region A and a pattern-loose region B, and isolation structures and S/D regions may be formed in the semiconductor substrate 101. In these cases, the metal plugs 125 a, 125 b, 127 a, and 127 b are formed over the S/D regions. In some embodiments, the metal plugs 125 a and 127 a are formed over the pattern-dense region A, and the metal plugs 125 b and 127 b are formed over the pattern-loose region B. The respective step is illustrated as the step S11 in the method 10 shown in FIG. 3 . It should be noted that the number of metal plugs over the pattern-dense region A is not limited to two, and may be more than two. Similarly, the number of metal plugs over the pattern-loose region B is not limited to two, and may be more than two, either.

In some embodiments, the metal plugs 125 a, 125 b, 127 a, and 127 b are made of copper (Cu), copper alloy, aluminum (Al), aluminum alloy, tungsten (W), tungsten alloy, titanium (Ti), titanium alloy, tantalum (Ta), tantalum alloy, another applicable conductive material, or a combination thereof. In some embodiments, the metal plugs 125 a, 125 b, 127 a, and 127 b are formed by electroplating. In some other embodiments, the metal plugs 125 a, 125 b, 127 a, and 127 b are formed by a chemical vapor deposition (CVD) process, a metal organic CVD (MOCVD) process, a physical vapor deposition (PVD) process, an atomic layer deposition (ALD) process, a sputtering process, or another applicable process.

Next, as shown in FIGS. 7 and 8 , the spacers 135 a, 135 b, 137 a, and 137 b are formed surrounding the metal plugs 125 a, 125 b, 127 a, and 127 b, in accordance with some embodiments. The respective step is illustrated as the step S13 in the method 10 shown in FIG. 3 . In some embodiments, the spacers 135 a, 135 b, 137 a, and 137 b are formed on sidewalls of the metal plugs 125 a, 125 b, 127 a, and 127 b, respectively.

In some embodiments, the spacers 135 a, 135 b, 137 a, and 137 b are made of silicon oxide, silicon carbide, silicon nitride, silicon oxynitride, another applicable dielectric material, or a combination thereof. In some embodiments, the formation of the spacers 135 a, 135 b, 137 a, and 137 b includes conformally depositing a spacer material (not shown) over the top surfaces and the sidewalls of the metal plugs 125 a, 125 b, 127 a, and 127 b and the top surface of the semiconductor substrate 101, and etching the spacer material to form the spacers 135 a, 135 b, 137 a, and 137 b on sidewalls of the metal plugs 125 a, 125 b, 127 a, and 127 b.

The deposition process for forming the spacers 135 a, 135 b, 137 a, and 137 b may include a CVD process, a PVD process, an ALD process, a spin-coating process, or another applicable process. In addition, the etching process for forming the spacers 135 a, 135 b, 137 a, and 137 b may be an anisotropic etching process, which removes the same amount of the spacer material vertically in all places, leaving the spacers 135 a, 135 b, 137 a, and 137 b on the sidewalls of the metal plugs 125 a, 125 b, 127 a, and 127 b. In some embodiments, the etching process is a dry etching process. As a result, an opening 140 a is obtained between the spacers 135 a and 137 a, and another opening 140 b is obtained between the spacers 135 b and 137 b.

Referring to FIG. 2 , after the spacers 135 a, 135 b, 137 a, and 137 b are formed, the boron nitride layer 143 is deposited over the structure of FIGS. 7 and 8 , such that the air gap G is formed in the pattern-dense region A, in accordance with some embodiments. The respective step is illustrated as the step S15-1 in the method 10 shown in FIG. 3 . In some embodiments, the boron nitride layer 143 has a hexagonal textured structure

In some embodiments, the boron nitride layer 143 is formed, using ALD and/or PEALD techniques. In this exemplary embodiment, the device is placed in a reaction chamber and is preferably heated to a temperature between 100 degrees Celsius and 500 degrees Celsius at a chamber pressure between 0.5 Torr and 10 Torr. More preferably, the temperature is between 300 degrees Celsius and 400 degrees Celsius, and the chamber pressure is between 0.5 Torr and 3 Torr.

In some embodiments, a boron precursor gas, such as one or more of boron trichloride (BCl₃), trimethylboron (B(CH₃)₃), diborane (B₂H₆), boron tribromide (BBr₃), or a precursor gas diluted with an inert gas such as helium (He) or argon (Ar), is then pulsed into the chamber where it is allowed to form a monolayer, or less than a monolayer, on the exposed surfaces of the device (i.e., surfaces of the gate stack, hardmask, semiconductor body, and, if present, the liner layer). In some embodiments, the boron precursor is pulsed for a time period between 2 seconds to 30 seconds at a flow rate ranging from 50 standard cubic centimeters (sccm) per minute to 1,000 sccm per minute. In some embodiments, the flow rate at which the boron precursor is pulsed into the chamber is between 100 sccm per minute and 500 sccm per minute.

In some embodiments, after the boron precursor is pulsed into the chamber, the chamber is purged with an inert gas, such as nitrogen (N₂), argon (Ar), or helium (He), for an amount of time (e.g., 30 seconds) necessary to remove byproducts and all unreacted species from the chamber.

In some embodiments, a nitrogen-containing reactant gas, such as nitrogen, ammonia (NH₃), or a mixture of nitrogen and hydrogen (H₂), is then pulsed into the deposition chamber to react with the first layer and form a monolayer of boron-nitrogen. In some embodiments, the nitrogen-containing gas is pulsed into the chamber for a time period between 1 second and 10 seconds at a flow rate between 50 sccm per minute and 1,000 sccm per minute. In some embodiments, the flow rate at which the nitrogen-containing gas is pulsed is between 100 sccm per minute and 300 sccm per minute.

In some embodiments, PEALD techniques may also be used when providing the nitrogen-containing reactant gas to the chamber, whereby the boron-nitrogen bond forming reactions are assisted by dissociating the reactant gases using a plasma. In some embodiments, where PEALD is used, the plasma condition is created at a power between 50 W to 500 W and, more preferably, at a power between 100 W and 200 W.

In some embodiments, after pulsing the nitrogen-containing reactant gas, the chamber is again purged for an appropriate amount of time, and the cycle is repeated until deposition of the boron nitride layer has occurred to the desired thickness.

Since the width W2 of the opening 140 b is greater than the width W1 of the opening 140 a (see FIG. 8 ), the opening 140 b is entirely filled by the boron nitride layer 143 while the opening 140 a is only partially filled by the boron nitride layer 143 due to the loading effect. As a result, the air gap G is sealed by the first portion P1 of the boron nitride layer 143. In some embodiments, the air gap G is enclosed by the first portion P1 of the boron nitride layer 143, the spacers 135 a, 137 a, and the semiconductor substrate 101. In addition, the width W2 is also the width of the second portion P2 of the boron nitride layer 143 between the spacers 135 b and 137 b, and the width W1 is also the width W1 of the first portion P1 of the boron nitride layer 143 between the spacers 135 a and 137 a, as shown in FIG. 2 in accordance with some embodiments.

After the boron nitride layer 143 is deposited, the semiconductor device 100 is obtained. By forming the air gap G between the metal plugs 125 a and 127 a (or between the spacers 135 a and 137 a surrounding the metal plugs 125 a and 127 a), the parasitic capacitance between the metal plugs 125 a and 127 a may be reduced, especially in the pattern-dense region A. As a result, the overall device performance may be improved (e.g., the decreased power consumption and signal delay).

FIGS. 9 to 15 are cross-sectional views illustrating intermediate stages in the formation of the semiconductor device 100, in accordance with some embodiments. The forming method shown in FIGS. 9-15 is different from the forming method shown in FIGS. 1, 2 , and 5 to 8.

A doped oxide layer 103 is formed over the pattern-dense region A and the pattern-loose region B of the semiconductor substrate 101, as shown in FIG. 9 in accordance with some embodiments. The respective step is illustrated as the step S21 in the method 20 shown in FIG. 4 . In some embodiments, the doped oxide layer 103 is made of silicon oxide, and P-type dopants, such as boron (B), gallium (Ga), or indium (In), or N-type dopants, such as phosphorous (P) or arsenic (As), can be implanted therein. In some embodiments, the doped oxide layer 103 is formed by a deposition process and is doped in-situ during the deposition process. In some other embodiments, the doped oxide layer 103 is formed by a deposition process and a subsequent ion implantation process.

Next, a patterned mask 105 is formed over the doped oxide layer 103, as shown in FIG. 10 in accordance with some embodiments. In some embodiments, the patterned mask 105 has openings 106 a, 106 b, 108 a, and 108 b, and portions of the doped oxide layer 103 are exposed by the openings 106 a, 106 b, 108 a, and 108 b of the patterned mask 105.

The patterned mask 105 may be formed by a deposition process and a patterning process. The deposition process for forming the patterned mask 105 may be a CVD process, a high-density plasma CVD (HDPCVD) process, a spin-coating process, or another applicable process. The patterning process for forming the patterned mask 105 may include a photolithography process and an etching process. The photolithography process may include photoresist coating (e.g., spin-coating), soft baking, mask aligning, exposure, post-exposure baking, developing the photoresist, rinsing and drying (e.g., hard baking). The etching process may include a dry etching process or a wet etching process.

Subsequently, an etching process is performed on the doped oxide layer 103 using the patterned mask 105 as a mask, as shown in FIG. 11 in accordance with some embodiments. After the etching process, openings 116 a, 116 b, 118 a, and 118 b are formed in the doped oxide layer 103. In some embodiments, portions of the semiconductor substrate 101 are exposed by the openings 116 a, 116 b, 118 a, and 118 b of the doped oxide layer 103. In particular, the openings 116 a and 118 a are located on the pattern-dense region A of the semiconductor substrate 101, and the openings 116 b and 118 b are located on the pattern-loose region B of the semiconductor substrate 101, in accordance with some embodiments. After the openings 116 a, 116 b, 118 a, and 118 b are formed, the patterned mask 105 may be removed.

Then, metal plugs 125 a, 125 b, 127 a, and 127 b are formed in the openings 116 a, 116 b, 118 a, and 118 b, as shown in FIG. 12 in accordance with some embodiments. The respective step is illustrated as the step S23 in the method 20 shown in FIG. 4 . In some embodiments, the metal plugs 125 a and 127 a are formed over the pattern-dense region A of the semiconductor substrate 101, and the metal plugs 125 b and 127 b are formed over the pattern-loose region B of the semiconductor substrate 101.

Some materials used to form the metal plugs 125 a, 125 b, 127 a, and 127 b of FIG. 12 are similar to, or the same as, those used to form the metal plugs 125 a, 125 b, 127 a, and 127 b of FIG. 6 , and details thereof are not repeated herein. In addition, the formation of the metal plugs 125 a, 125 b, 127 a, and 127 b of FIG. 12 may include depositing a conductive material (not shown) in the openings 116 a, 116 b, 118 a, and 118 b and over the doped oxide layer 103, and performing a planarization process to remove the excess portions of the conductive material, such that the doped oxide layer 103 is exposed. In some embodiments, the patterned mask 105 (see FIG. 10 ) is not removed after the openings 116 a, 116 b, 118 a, and 118 b are formed, and the conductive layer is deposited in the openings 116 a, 116 b, 118 a, and 118 b and over the patterned mask 105. In these cases, the patterned mask 105 may be removed during the planarization process. The planarization process may be a chemical mechanical polishing (CMP) process.

After the metal plugs 125 a, 125 b, 127 a, and 127 b are formed, the doped oxide layer 103 is removed, as shown in FIG. 13 in accordance with some embodiments. The respective step is illustrated as the step S25 in the method 20 shown in FIG. 4 . In some embodiments, the doped oxide layer 103 is removed by an ashing process or stripping process. In some other embodiments, an etching process is used to remove the doped oxide layer 103. The etching process may include a wet etching process, a dry etching process, or a combination thereof.

Next, as shown in FIG. 14 , the spacers 135 a, 135 b, 137 a, and 137 b are formed surrounding the metal plugs 125 a, 125 b, 127 a, and 127 b, in accordance with some embodiments. The respective step is illustrated as the step S27 in the method 20 shown in FIG. 4 . Some materials and processes used to form the spacers 135 a, 135 b, 137 a, and 137 b of FIG. 14 are similar to, or the same as, those used to form the spacers 135 a, 135 b, 137 a, and 137 b of FIG. 8 , and details thereof are not repeated herein.

After the spacers 135 a, 135 b, 137 a, and 137 b are formed, opening 140 a between the spacers 135 a and 137 a and opening 140 b between the spacers 135 b and 137 b are obtained. It should be noted that the width W1 of the opening 140 a in the pattern-dense region A is less than the width W2 of the opening 140 b in the pattern-loose region B, in accordance with some embodiments.

After the spacers 135 a, 135 b, 137 a, and 137 b are formed, the boron nitride layer 143 is deposited over the structure of FIG. 14 , such that the air gap G is formed in the opening 140 a in the pattern-dense region A, as shown in FIG. 15 in accordance with some embodiments. The respective step is illustrated as the step S29-1 in the method 20 shown in FIG. 4 . Some materials and processes used to form the boron nitride layer 143 of FIG. 15 are similar to, or the same as, those used to form the boron nitride layer 143 of FIG. 2 , and details thereof are not repeated herein.

As mentioned above, the width W2 of the opening 140 b is greater than the width W1 of the opening 140 a (see FIG. 14 ). Therefore, the opening 140 b is entirely filled by the boron nitride layer 143 while the opening 140 a is only partially filled by the boron nitride layer 143 due to the loading effect. As a result, the air gap G is sealed by the first portion P1 of the boron nitride layer 143, and the second portion P2 of the boron nitride layer 143 is in direct contact with the semiconductor substrate 101.

FIGS. 16 to 18 are cross-sectional views illustrating intermediate stages in the formation of the semiconductor device 100, in accordance with some embodiments. The forming method shown in FIGS. 16 to 18 is different from the forming method shown in FIGS. 1, 2, and 5 to 8 and the forming method shown in FIGS. 9 to 15 .

Continuing with FIG. 8 or 14 , an energy removable layer 151 is selectively deposited between the spacers 135 a and 137 a in the pattern-dense region A, as shown in FIG. 16 in accordance with some embodiments. The respective step is illustrated as the step S15-2 in the method 10 shown in FIG. 3 and the step S29-2 in the method 20 shown in FIG. 4 . It should be noted that the energy removable layer 151 is formed by performing a deposition process that selectively deposits the energy removable layer 151 between the spacers 135 a and 137 a in the pattern-dense region A without depositing the energy removable layer 151 between the spacers 135 b and 137 b in the pattern-loose region B, in accordance with some embodiments.

In some embodiments, the materials of the energy removable layer 151 include a thermal decomposable material. In some other embodiments, the materials of the energy removable layer 151 include a photonic decomposable material, an e-beam decomposable material, or another applicable energy decomposable material. Specifically, in some embodiments, the materials of the energy removable layer 151 include a base material and a decomposable porogen material that is substantially removed once being exposed to an energy source (e.g., heat).

In some embodiments, the base material includes hydrogen silsesquioxane (HSQ), methylsilsesquioxane (MSQ), porous polyarylether (PAE), porous SiLK, or porous silicon oxide (SiO₂), and the decomposable porogen material includes a porogen organic compound, which can provide porosity to the space originally occupied by the energy removable layer 151 in the subsequent processes. In addition, the deposition process for forming the dielectric layer 151 may include a CVD process, a PVD process, an ALD process, a spin-coating process, or another applicable process. After the energy removable layer 151 is formed, a reduced opening 140 a′ may be obtained over the energy removable layer 151.

Then, the boron nitride layer 143 is formed covering the structure of FIG. 16 , as shown in FIG. 17 in accordance with some embodiments. The respective step is illustrated as the step S17 in the method 10 shown in FIG. 3 and the step S31 in the method 20 shown in FIG. 4 . Some materials and processes used to form the boron nitride layer 143 of FIG. 17 are similar to, or the same as, those used to form the boron nitride layer 143 of FIG. 2 , and details thereof are not repeated herein. It should be noted that the structure has no air gaps in this stage.

After the boron nitride layer 143 is deposited, a heat treatment process is performed, as shown in FIG. 18 in accordance with some embodiments. In some embodiments, during the heat treatment process, the energy removable layer 151 is removed, such that the air gap G is formed between the spacers 135 a and 137 a in the pattern-dense region A. The respective step is illustrated as the step S19 in the method 10 shown in FIG. 3 and the step S33 in the method 20 shown in FIG. 4 .

More specifically, the heat treatment process is used to remove the decomposable porogen materials of the energy removable layer 151 to generate pores, and the pores are filled by air after the decomposable porogen materials are removed, such that the air gap G is obtained, in accordance with some embodiments. In some other embodiments, the heat treatment process can be replaced by a light treatment process, an e-beam treatment process, a combination thereof, or another applicable energy treatment process. For example, a ultra-violet (UV) light or laser light may be used to remove the decomposable porogen materials of the energy removable layer 151, such that the air gap G is obtained.

FIG. 19 is a cross-sectional view illustrating an intermediate stage of forming an energy removable structure 151′ during the formation of a modified semiconductor device 100′, in accordance with some embodiments.

Continuing with FIG. 17 , a heat treatment process is performed to remove a portion of the energy removable layer 151, as shown in FIG. 19 in accordance with some embodiments. In some embodiments, during the heat treatment process, the energy removable layer 151 is transformed into an energy removable structure 151′, such that the air gap G is enclosed by the energy removable structure 151′. The respective step is illustrated as the step S19 in the method 10 shown in FIG. 3 and the step S33 in the method 20 shown in FIG. 4 .

More specifically, in some embodiments, the heat treatment process is used to remove the decomposable porogen materials of the energy removable layer 151 to generate pores, and the base materials of the energy removable layer 151 are accumulated at the edges of the energy removable layer 151. The pores are filled by air after the decomposable porogen materials are removed, such that the air gap G is obtained inside the remaining portions of the energy removable layer 151 (i.e., the energy removable structure 151′), in accordance with some embodiments. In some other embodiments, the air gap G is not fully surrounded by the energy removable structure 151′ due to gravity, and a portion of the energy removable structure 151′ is between the air gap G and the semiconductor substrate 101. After the energy removable structure 151′ is formed, the modified semiconductor device 100′ is obtained.

FIG. 20 is a partial schematic illustration of an exemplary integrated circuit, such as a memory device 1000, including an array of memory cells 30 in accordance with some embodiments. In some embodiments, the memory device 1000 includes a dynamic random access memory (DRAM). In some embodiments, the memory device 1000 includes a number of memory cells 30 arranged in a grid pattern and including a number of rows and columns. The number of memory cells 30 may vary depending on system requirements and fabrication technology.

In some embodiments, each of the memory cells 30 includes an access device and a storage device. The access device is configured to provide controlled access to the storage device. In particular, the access device is a field effect transistor (FET) 31 and the storage device is a capacitor 33, in accordance with some embodiments. In each of the memory cells 30, the FET 31 includes a drain 35, a source 37 and a gate 39. One terminal of the capacitor 33 is electrically connected to the source 37 of the FET 31, and the other terminal of the capacitor 33 may be electrically connected to the ground. In addition, in each of the memory cells 30, the gate 39 of the FET 31 is electrically connected to a word line WL, and the drain 35 of the FET 31 is electrically connected to a bit line BL.

The above description mentions the terminal of the FET 31 electrically connected to the capacitor 33 is the source 37, and the terminal of the FET 31 electrically connected to the bit line BL is the drain 35. However, during read and write operations, the terminal of the FET 31 electrically connected to the capacitor 33 may be the drain, and the terminal of the FET 31 electrically connected to the bit line BL may be the source. That is, either terminal of the FET 31 could be a source or a drain depending on the manner in which the FET 31 is being controlled by the voltages applied to the source, the drain and the gate.

By controlling the voltage at the gate 39 via the word line WL, a voltage potential may be created across the FET 30 such that the electrical charge can flow from the drain 35 to the capacitor 33. Therefore, the electrical charge stored in the capacitor 33 may be interpreted as a binary data value in the memory cell 30. For example, a positive charge above a threshold voltage stored in the capacitor 33 may be interpreted as binary “1.” If the charge in the capacitor 33 is below the threshold value, a binary value of “0” is said to be stored in the memory cell 30.

The bit lines BL are configured to read and write data to and from the memory cells 30. The word lines WL are configured to activate the field effect transistors (FET) 31 to access a particular row of the memory cells 30. Accordingly, the memory device 1000 also includes a periphery region which may include an address buffer, a row decoder and a column decoder. The row decoder and the column decoder selectively access the memory cells 30 in response to address signals that are provided to the address buffer during read, write and refresh operations. The address signals are typically provided by an external controller such as a microprocessor or another type of memory controller.

Referring back to FIGS. 2 and 19 , the air gap G is formed in the pattern-dense region A of the semiconductor device 100 or 100′, while no air gap is formed in the pattern-loose region B of the semiconductor device 100 or 100′. The pattern-dense region A may be any of the regions of the memory cells 30 in the memory device 1000, and the pattern-loose region B may be any of the regions of the address buffer, the row decoder, or the column decoder in the memory device 1000.

Embodiments of the semiconductor devices 100 and 100′ are provided in the disclosure. The semiconductor devices 100 and 100′ include a plurality of metal plugs 125 a, 125 b, 127 a, 127 b over the pattern-dense region A and the pattern-loose region B of the semiconductor substrate 101, spacers 135 a, 135 b, 137 a, 137 b surrounding the metal plugs 125 a, 125 b, 127 a, 127 b, respectively, and the boron nitride layer 143 covering the metal plugs 125 a, 125 b, 127 a, 127 b and the spacers 135 a, 135 b, 137 a, 137 b. Particularly, the boron nitride layer 143 has a first portion P1 between the spacers 135 a and 137 a in the pattern-dense region A and a second portion P2 between the spacers 135 b and 137 b in the pattern-loose region B, the first portion P1 of the boron nitride layer 143 is separated from the semiconductor substrate 101 by an air gap G while the second portion P2 of the dielectric layer is in direct contact with the semiconductor substrate 101. Therefore, the parasitic capacitance between the metal plugs 125 a and 127 a over the pattern-dense region A may be reduced. As a result, the overall device performance may be improved (i.e., the decreased power consumption and resistive-capacitive (RC) delay).

Reference is made to FIG. 21 . FIG. 21 is a cross-sectional view illustrating a semiconductor device 200 according to some embodiments of the present disclosure. The semiconductor device 200 includes a semiconductor substrate 201, a barrier layer 225 a, a barrier layer 225 b, a barrier 227 a, a barrier layer 227 b, a conductive feature 226 a, a conductive feature 226 b, a conductive feature 228 a, a conductive feature 228 b, a spacer 235 a, a spacer 235 b, a spacer 237 a, a spacer 237 b, and a boron nitride layer 243.

The barrier layer 225 a, the barrier layer 227 a, the conductive feature 226 a, the conductive feature 228 a, the spacers 235 a and the spacer 237 a are disposed in a pattern-dense region A. The barrier layer 225 b, the barrier layer 227 b, the conductive feature 226 b, the conductive feature 228 b, the spacers 235 b and the spacer 237 b are disposed in a pattern-loose region B. A distance between the conductive feature 226 a and the conductive feature 228 a is less than a distance between the conductive feature 226 b and the conductive feature 228 b.

The semiconductor device 200 is similar to the semiconductor device 100. The semiconductor substrate, the spacers, the boron nitride layer, the pattern-dense region and the pattern-loose region of the semiconductor device 200 correspond to the semiconductor substrate, the spacers, the boron nitride layer, the pattern-dense region and the pattern-loose region of the semiconductor device 100, respectively. Therefore, the details of the semiconductor substrate, the spacers, the boron nitride layer, the pattern-dense region and the pattern-loose region of the semiconductor device 200 are not repeated herein.

Compared to the semiconductor device 100, the conductive feature 115 a in the semiconductor device 100 is replaced by the barrier layer 225 a and the conductive feature 226 a; the conductive feature 115 b in the semiconductor device 100 is replaced by the barrier layer 225 b and the conductive feature 226 b; the conductive feature 117 a in the semiconductor device 100 is replaced by the barrier layer 227 a and the conductive feature 228 a; and the conductive feature 117 b in the semiconductor device 100 is replaced by the barrier layer 227 b and the conductive feature 228 b.

In some embodiments, the barrier layer 225 a and the conductive feature 226 a are configured to be a metal plug; the barrier layer 225 b and the conductive feature 226 b are configured to be a metal plug; the barrier layer 227 a and the conductive feature 228 a are configured to be a metal plug; and the barrier layer 227 b and the conductive feature 228 b are configured to be a metal plug.

In some embodiments, a portion of the fabrication of the semiconductor device 200 at least uses the process shown in FIG. 9 , FIG. 10 and FIG. 11 .

Continuing with FIG. 11 , the barrier layers 225 a, 225 b, 227 a and 227 b are disposed in openings 116 a, 116 b, 118 a and 118 b, respectively. The barrier layers 225 a, 225 b, 227 a and 227 b are conformally cover the sidewalls of the openings 116 a, 116 b, 118 a and 118 b, respectively, and the top surface of semiconductor substrate 201 exposed by the openings. Therefore, each of the barrier layers 225 a, 225 b, 227 a and 227 b has a U-shape.

Each of the barrier layers 225 a, 225 b, 227 a and 227 b has a bottom portion being contact with the top surface of the semiconductor substrate 201 and a sidewall portion being contact with the doped oxide layer 103. The bottom portion and the sidewall portion are connected to each other. In some embodiments, a thickness T1 of the sidewall portion is less than a thickness T2 of the bottom portion.

After the barrier layers 225 a, 225 b, 227 a and 227 b are formed, the conductive features 226 a, 226 b, 228 a and 228 b are formed over the barrier layers 225 a, 225 b, 227 a and 227 b, respectively.

After the conductive features 226 a, 226 b, 228 a and 228 b are formed, the doped oxide layer 103 is removed, and the spacers 235 a, 235 b, 237 a and 237 b are formed over the semiconductor substrate 201 and surround the metal plugs.

After the spacers 235 a, 235 b, 237 a and 237 b are formed, the boron nitride layer 243 is formed over the semiconductor substrate 201 and the metal plugs.

Because the metal plugs in the pattern-dense region A are disposed closely, when the boron nitride layer 243 is disposed, an air gap G is formed between the metal plugs in the pattern-dense region A due to the loading effect.

The air has low dielectric constant, therefore, the air gap G is configured to reduce a parasitic capacitance between the metal plugs besides the air gap G. Consequently, the RC delay of the semiconductor device 200 can be improved.

In alternative embodiments, the air gap G in the semiconductor device 200 can be formed using the processes shown in FIG. 16 , FIG. 17 and FIG. 18 .

In some embodiments, the pattern-dense region A of the semiconductor device 200 may be any of the regions of the memory cells 30 in the memory device 1000, and the pattern-loose region B of the semiconductor device 200 may be any of the regions of the address buffer, the row decoder, or the column decoder in the memory device 1000 shown in FIG. 20 .

In some embodiments, the barrier layers 225 a, 225 b, 227 a and 227 b include titanium (Ti), titanium nitride (TiN), or a combination thereof. In some embodiments, the conductive features 226 a, 226 b, 228 a and 228 b include tungsten (W).

Reference is made to FIG. 22 . FIG. 22 is a cross-sectional view illustrating the semiconductor device 200 according to other embodiments of the present disclosure.

In other embodiments, the air gap G in the semiconductor device 200 can be formed using the processes shown in FIG. 16 , FIG. 17 and FIG. 19 . As shown in FIG. 22 , the semiconductor device 200 further includes the energy removable structure 151′ surrounding the air gap G.

In various embodiments, although not shown in FIG. 21 and FIG. 22 , the metal plugs in the semiconductor device 200 may penetrate through the boron nitride layer 243 and the active region in the semiconductor substrate 201, and the bottommost surfaces of the conductive features 226 a, 226 b, 228 a and 228 b are lower than the topmost surface of the semiconductor substrate 201. In other words, the bottom portion of the barrier layers 225 a, 225 b, 227 a and 227 b are disposed in the semiconductor substrate 201 in their entireties.

Reference is made to FIG. 23 . FIG. 23 is a cross-sectional view illustrating semiconductor device 300 a according to some embodiments of the present disclosure.

The semiconductor device 300 a includes a semiconductor substrate 301, a conductive feature 325 a, a conductive feature 325 b, a conductive feature 327 a, a conductive feature 327 b, a spacer 335 a, a spacer 335 b, a spacer 337 a, a spacer 337 b, a boron nitride layer 343, an air gap G, center conductive layers 401, outer conductive layers 402 and top conductive plugs 403.

The semiconductor device 300 a is similar to the semiconductor device 200. However, compared to the semiconductor device 200, the semiconductor device 300 a further includes the center conductive layers 401, the outer conductive layers 402 and the top conductive plugs 403. The rest elements of the semiconductor device 300 a are substantially the same as the semiconductor device 200. Thus, the details of the rest elements are omitted herein.

In FIG. 23 , the center conductive layers 401 are disposed on and in contact with the conductive features 325 a, 325 b, 327 a and 327 b. The outer conductive layers 402 are disposed over the center conductive layers 401 and the conductive features 325 a, 325 b, 327 a and 327 b. Each of the outer conductive layers 402 has an arch shape, and covers the respective center conductive layer 401. The outer conductive layers 402 are in contact with the respective conductive features 325 a, 325 b, 327 a and 327 b. The top conductive plugs 403 are disposed on the respective outer conductive layer 402. In some embodiments, a maximum width of the top conductive plug 403 is substantially equal to a maximum width of the outer conductive layer 402. In some embodiments, the top conductive plugs 403 are coplanar with the boron nitride layer 343.

In some embodiments, the outer conductive layers 402 may have an approximately uniform thickness. In some embodiments, the outer conductive layers 402 are formed of metal silicide. In some embodiments, the outer conductive layers 402 include impurities such as phosphorus, arsenic, antimony, or boron.

In some embodiments, the center conductive layers 401 are formed of polycrystalline silicon, polycrystalline germanium, polycrystalline silicon-germanium, or the like. In some embodiments, the center conductive layers 401 include impurities such as phosphorus, arsenic, antimony, or boron.

Reference is made to FIG. 24 . FIG. 24 is a cross-sectional view illustrating semiconductor device 300 b according to some embodiments of the present disclosure.

The semiconductor device 300 b includes a semiconductor substrate 301, a conductive feature 325 a, a conductive feature 325 b, a conductive feature 327 a, a conductive feature 327 b, a spacer 335 a, a spacer 335 b, a spacer 337 a, a spacer 337 b, a boron nitride layer 343, an air gap G, center conductive layers 501, outer conductive layers 502 and top conductive plugs 503.

The semiconductor device 300 b is similar to the semiconductor device 200. However, compared to the semiconductor device 200, the semiconductor device 300 b further includes the center conductive layers 501, the outer conductive layers 502 and the top conductive plugs 503. The rest elements of the semiconductor device 300 b are substantially the same as the semiconductor device 200. Thus, the details of the rest elements are omitted herein.

In FIG. 24 , the center conductive layers 501 are disposed on and in contact with the conductive features 325 a, 325 b, 327 a and 327 b. The outer conductive layers 502 are disposed over the center conductive layers 501 and the conductive features 325 a, 325 b, 327 a and 327 b. Each of the center conductive layers 501 has a triangle shape, and the outer conductive layers 502 cover the respective center conductive layer 501. Thus, each of the outer conductive layers 502 has an inverted V-shape. The outer conductive layers 502 are in contact with the respective conductive features 325 a, 325 b, 327 a and 327 b. The top conductive plugs 503 are disposed on the respective outer conductive layer 502. In some embodiments, a maximum width of the top conductive plug 503 is substantially equal to a maximum width of the outer conductive layer 502. In some embodiments, the top conductive plugs 503 are coplanar with the boron nitride layer 343.

In some embodiments, the outer conductive layers 502 may have an approximately uniform thickness. In some embodiments, the outer conductive layers 502 are formed of metal silicide. In some embodiments, the outer conductive layers 502 include impurities such as phosphorus, arsenic, antimony, or boron.

In some embodiments, the center conductive layers 501 are formed of polycrystalline silicon, polycrystalline germanium, polycrystalline silicon-germanium, or the like. In some embodiments, the center conductive layers 501 include impurities such as phosphorus, arsenic, antimony, or boron.

Reference is made to FIG. 25 . FIG. 25 is a cross-sectional view illustrating semiconductor device 300 c according to some embodiments of the present disclosure.

The semiconductor device 300 c includes a semiconductor substrate 301, a conductive feature 325 a, a conductive feature 325 b, a conductive feature 327 a, a conductive feature 327 b, a spacer 335 a, a spacer 335 b, a spacer 337 a, a spacer 337 b, a boron nitride layer 343, an air gap G, center conductive layers 601, outer conductive layers 602 and top conductive plugs 603.

The semiconductor device 300 c is similar to the semiconductor device 200. However, compared to the semiconductor device 200, the semiconductor device 300 c further includes the center conductive layers 601, the outer conductive layers 602 and the top conductive plugs 603. The rest elements of the semiconductor device 300 c are substantially the same as the semiconductor device 200. Thus, the details of the rest elements are omitted herein.

In FIG. 25 , the center conductive layers 601 are disposed on and in contact with the conductive features 325 a, 325 b, 327 a and 327 b. The outer conductive layers 602 are disposed over the center conductive layers 601 and the conductive features 325 a, 325 b, 327 a and 327 b. Each of the center conductive layers 601 has a circular arc shape, and the outer conductive layers 602 cover the respective center conductive layer 601. Each of the center conductive layers 601 has a concave top surface, and each of the outer conductive layers 602 has a convex bottom surface. The outer conductive layers 602 are in contact with the respective conductive features 325 a, 325 b, 327 a and 327 b. The top conductive plugs 603 are disposed on the respective outer conductive layer 602. In some embodiments, a maximum width of the top conductive plug 603 is substantially equal to a maximum width of the outer conductive layer 602. In some embodiments, the top conductive plugs 603 are coplanar with the boron nitride layer 343.

In some embodiments, the outer conductive layers 602 may have an approximately uniform thickness. In some embodiments, the outer conductive layers 602 are formed of metal silicide. In some embodiments, the outer conductive layers 602 include impurities such as phosphorus, arsenic, antimony, or boron.

In some embodiments, the center conductive layers 601 are formed of polycrystalline silicon, polycrystalline germanium, polycrystalline silicon-germanium, or the like. In some embodiments, the center conductive layers 601 include impurities such as phosphorus, arsenic, antimony, or boron.

Referring back to FIGS. 20 and 25 , the air gap G is formed in the pattern-dense region A, while no air gap is formed in the pattern-loose region B. The pattern-dense region A may be any of the regions of the memory cells 30 in the memory device 1000, and the pattern-loose region B may be any of the peripheral regions, such as the address buffer, the row decoder, or the column decoder, in the memory device 1000.

An aspect of the present disclosure provides a semiconductor device including a semiconductor substrate, a first metal plug, a second metal plug, a third metal plug, a fourth metal plug, and a boron nitride layer. The first metal plug and the second metal plug are disposed over a pattern-dense region of the semiconductor substrate. The third metal plug and the fourth metal plug are disposed over a pattern-loose region of the semiconductor substrate. The boron nitride layer is disposed over the semiconductor substrate. Each of the first metal plug and the second metal plug includes a barrier layer and a conductive feature. The barrier layer is contact with the semiconductor substrate. The conductive feature is disposed over the barrier layer. The conductive feature is separated from the semiconductor substrate by the barrier layer.

Another aspect of the present disclosure provides a semiconductor device including a semiconductor substrate, a first conductive feature, a second conductive feature, a third conductive feature, a fourth conductive feature, a boron nitride layer, a center conductive layer, an outer conductive layer and a top conductive plug. The first conductive feature and the conductive feature are disposed over a pattern-dense region of the semiconductor substrate. The third conductive feature and the fourth conductive feature are disposed over a pattern-loose region of the semiconductor substrate. The boron nitride layer is disposed over the semiconductor substrate. The center conductive layer is disposed over the first conductive feature. The outer conductive layer is disposed over the center conductive layer. The top conductive plug is disposed over the outer conductive layer.

Yet another aspect of the present disclosure provides a method for preparing a semiconductor device. The method includes: forming a first metal plug, a second metal plug, a third metal plug and a fourth metal plug over a semiconductor substrate; and depositing a boron nitride layer over the first metal plug, the second metal plug, the third metal plug, and the fourth metal plug. Forming a first metal plug, a second metal plug, a third metal plug and a fourth metal plug includes: forming a doped oxide layer over the semiconductor substrate, wherein the doped oxide layer has a first opening and a second opening; conformally forming a barrier layer in the first opening and the second opening; forming a first conductive feature in the first opening and a second conductive feature in the second opening, wherein the first conductive feature and the second conductive feature are separated from the semiconductor substrate by the barrier layer; and removing the doped oxide layer.

The embodiments of the present disclosure have some advantageous features. By forming an air gap between the adjacent metal plugs in the pattern-dense region, the parasitic capacitance between the metal plugs in the pattern-dense region may be reduced. This significantly improves the overall device performance.

Although the present disclosure and its advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure as defined by the appended claims. For example, many of the processes discussed above can be implemented in different methodologies and replaced by other processes, or a combination thereof.

Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure of the present invention, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present disclosure. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, and steps. 

What is claimed is:
 1. A semiconductor device, comprising: a semiconductor substrate; a first metal plug and a second metal plug, disposed over a pattern-dense region of the semiconductor substrate; a third metal plug and a fourth metal plug, disposed over a pattern-loose region of the semiconductor substrate; and a boron nitride layer, disposed over the semiconductor substrate, wherein each of the first metal plug and the second metal plug comprises: a barrier layer, being contact with the semiconductor substrate; and a conductive feature, disposed over the barrier layer, wherein the conductive feature is separated from the semiconductor substrate by the barrier layer.
 2. The semiconductor device of claim 1, wherein the first metal plug and the second metal plug penetrate through the boron nitride layer and active region of the semiconductor substrate.
 3. The semiconductor device of claim 1, wherein a thickness of a bottom portion of the barrier layer is less than a thickness of a sidewall portion of the barrier layer.
 4. The semiconductor device of claim 1, further comprising: a first spacer, surrounding the first metal plug; and a second spacer, surrounding the second metal plug, wherein the first spacer and the second spacer are in contact with the boron nitride layer, the semiconductor substrate and the barrier layer.
 5. The semiconductor device of claim 4, further comprising: an air gap, disposed between the first metal plug and the second metal plug.
 6. The semiconductor device of claim 5, wherein a topmost surface of the air gap is lower than a topmost surface of the first metal plug.
 7. The semiconductor device of claim 5, wherein the air gap is in contact with the semiconductor substrate.
 8. The semiconductor device of claim 5, further comprising: an energy removable structure, surrounding the air gap.
 9. The semiconductor device of claim 1, wherein the pattern-dense region is in a memory cell of a memory device, and the pattern-loose region is in a peripheral region outside of the memory cell of the memory device.
 10. A semiconductor device, comprising: a semiconductor substrate; a first conductive feature and a second conductive feature, disposed over a pattern-dense region of the semiconductor substrate; a third conductive feature and a fourth conductive feature, disposed over a pattern-loose region of the semiconductor substrate; a boron nitride layer, disposed over the semiconductor substrate; a center conductive layer, disposed over the first conductive feature; an outer conductive layer, disposed over the center conductive layer; and a top conductive plug, disposed over the outer conductive layer.
 11. The semiconductor device of claim 10, wherein a topmost surface of the top conductive plug is coplanar with a top surface of the boron nitride layer.
 12. The semiconductor device of claim 10, wherein the outer conductive layer comprises metal silicide.
 13. The semiconductor device of claim 10, wherein the center conductive layer comprises polycrystalline silicon.
 14. The semiconductor device of claim 10, wherein the center conductive layer comprises polycrystalline germanium.
 15. The semiconductor device of claim 10, wherein the center conductive layer comprises polycrystalline silicon-germanium.
 16. The semiconductor device of claim 10, wherein a maximum width of the top conductive plug is substantially equal to a maximum width of the outer conductive layer.
 17. The semiconductor device of claim 10, further comprising: a first spacer, surrounding the first conductive feature; and a second spacer, surrounding the second conductive feature.
 18. The semiconductor device of claim 17, further comprising: an air gap, disposed between the first conductive feature and the second conductive feature, wherein the air gap is in contact with the semiconductor substrate, the first spacer, the second spacer, and the boron nitride layer.
 19. The semiconductor device of claim 18, wherein a topmost surface of the air gap is lower than a topmost surface of the first conductive feature.
 20. The semiconductor device of claim 10, wherein the outer conductive layer has a uniform thickness; wherein the pattern-dense region is in a memory cell of a memory device, and the pattern-loose region is in a peripheral region outside of the memory cell of the memory device. 